MJD31 (NPN), MJD32 (PNP) دیتاشیت

MJD31 (NPN), MJD32 (PNP)

مشخصات دیتاشیت

نام دیتاشیت MJD31 (NPN), MJD32 (PNP)
حجم فایل 152.264 کیلوبایت
نوع فایل pdf
تعداد صفحات 10

مشاهده دیتاشیت MJD31 (NPN), MJD32 (PNP)

دانلود دیتاشیت

سایر مستندات

NJVMJD32CT4G-VF01 8 pages

مشخصات فنی

  • RoHS: true
  • Category: Triode/MOS Tube/Transistor/Bipolar Transistors - BJT
  • Datasheet: onsemi NJVMJD32CT4G-VF01
  • Transistor Type: PNP
  • Operating Temperature: -65°C~+150°C@(Tj)
  • Collector Current (Ic): 3A
  • Power Dissipation (Pd): 15W
  • Transition Frequency (fT): 3MHz
  • DC Current Gain (hFE@Ic,Vce): 10@3A,4V
  • Collector Cut-Off Current (Icbo): -
  • Collector-Emitter Breakdown Voltage (Vceo): 100V
  • Collector-Emitter Saturation Voltage (VCE(sat)@Ic,Ib): 1.2V@3A,375mA
  • Package: TO-252
  • Manufacturer: onsemi
  • Series: Automotive, AEC-Q101
  • Packaging: Cut Tape (CT)
  • Part Status: Discontinued at Digi-Key
  • Current - Collector (Ic) (Max): 3A
  • Voltage - Collector Emitter Breakdown (Max): 100V
  • Vce Saturation (Max) @ Ib, Ic: 1.2V @ 375mA, 3A
  • Current - Collector Cutoff (Max): 50µA
  • DC Current Gain (hFE) (Min) @ Ic, Vce: 25 @ 1A, 4V
  • Power - Max: 1.56W
  • Frequency - Transition: 3MHz
  • Mounting Type: Surface Mount
  • Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
  • Supplier Device Package: DPAK
  • Base Part Number: NJVMJD32
  • detail: Bipolar (BJT) Transistor PNP 100V 3A 3MHz 1.56W Surface Mount DPAK

محصولات مشابه